AON6435 30v p-channel mosfet general description product summary v ds i d (at v gs = -10v) -34a r ds(on) (at v gs = -10v) < 17m w r ds(on) (at v gs =-5v) < 34m w 100% uis tested 100% r g tested symbol v ds the AON6435 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -30v drain-source voltage -30 g ds top view 12 3 4 87 6 5 pin1 dfn5x6 top view bottom view v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 3.4 64 4 t c =25c t c =100c w power dissipation a p dsm w t a =70c 31 2.6 t a =25c power dissipation b p d avalanche energy l=0.1mh c mj avalanche current c -10 v c i dsm a t a =70c continuous drain current 29 -12 a 24 v 25 gate-source voltage drain-source voltage -30 c/w r q ja 24 53 -95 30 thermal characteristics units maximum junction-to-ambient a a t a =25c pulsed drain current c continuous drain current i d -34 -21.5 parameter typ max t c =25c 4.1 12.5 t c =100c junction and storage temperature range -55 to 150 rev 0: sep 2011 www.aosmd.com page 1 of 7
AON6435 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.7 -2.3 -3 v i d(on) -95 a 13 17 t j =125c 19 25 25 34 m w g fs 28 s v sd -0.73 -1 v i s -35 a c iss 1130 1400 pf c oss 240 pf c rss 155 pf r g 5.8 8 w q g (10v) 21 nc q g (4.5v) 10 nc q gs 4 nc q gd 6 nc t d(on) 10 ns t 8 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-20a r ds(on) static drain-source on-resistance i dss m a v ds =v gs, i d =-250 m a v ds =0v, v gs =25v zero gate voltage drain current gate-body leakage current m w i s =-1a,v gs =0v v ds =-5v, i d =-20a v gs =-5v, i d =-15a forward transconductance diode forward voltage turn-on rise time v =-10v, v =-15v, maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =-10v, v ds =-15v, i d =-20a gate source charge gate drain charge total gate charge t r 8 ns t d(off) 15 ns t f 7 ns t rr 13.5 ns q rr 29 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-20a, di/dt=500a/ m s turn-on rise time turn-off delaytime i f =-20a, di/dt=500a/ m s v gs =-10v, v ds =-15v, r l =0.75 w , r gen =3 w turn-off fall time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 150 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c.maximum uis current limited by test equipment. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0: sep 2011 www.aosmd.com page 2 of 7
AON6435 typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 1 2 3 4 5 6 7 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =-5v i d =-15a v gs =-10v i d =-20a 25 c 125 c v ds =-5v v gs =-5v v gs =-10v 0 20 40 60 80 100 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs = - 4v -6v -10v -8v -4.5v 18 40 voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 10 20 30 40 50 60 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-20a 25 c 125 c rev 0: sep 2011 www.aosmd.com page 3 of 7
AON6435 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 5 10 15 20 25 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 50 100 150 200 250 300 350 400 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction - to - case c oss c rss v ds =-15v i d =-20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 18 40 figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 9: maximum forward biased safe operating area (note f) r q jc =4 c/w rev 0: sep 2011 www.aosmd.com page 4 of 7
AON6435 typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 current rating i d (a) t case ( c) 1 10 100 1000 1 10 100 1000 -i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s t case ( c) figure 14: current de-rating (note f) 0 50 100 150 200 250 300 350 400 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 16: single pulse power rating junction-to-am bient (note h) t a =25 c figure 15: maximum forward biased safe operating area (note h) rev 0: sep 2011 www.aosmd.com page 5 of 7
AON6435 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 17: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =64 c/w rev 0: sep 2011 www.aosmd.com page 6 of 7
AON6435 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v id vds unclamped inductive switching (uis) test circuit & waveforms vds l 2 e = 1/2 li ar ar bv vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 0: sep 2011 www.aosmd.com page 7 of 7
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